The Formation and Growth Process of Ru Silicide on Si(111) Surface

• TORAMARU Masamitsu

  Fac. of Engineering, Yokohama National University

• KOBAYASHI Naoto

  Fac. of Engineering, Yokohama National University

• OHNO Shinya

  Fac. of Engineering, Yokohama National University

• SHUDO Kenichi

  Fac. of Engineering, Yokohama National University

• MIYAMOTO Yasuyoshi

  NHK Science and Technical Research Laboratories

• KAWAMURA Norikazu

  NHK Science and Technical Research Laboratories

Bibliographic Information

Other Title

• Ｓｉ（１１１）面におけるＲｕシリサイドの形成と成長過程
• Si 111 メン ニ オケル Ru シリサイド ノ ケイセイ ト セイチョウ カテイ

Abstract

  Formation process of nanoscale ruthenium silicide islands on a Si(111) surfaces was studied with scanning tunneling microscopy for the first time. The ruthenium silicide islands were formed and grown on the only disorder-region, and small island grew up in three dimensions by incorporation of clusters including Ru exist on disorder-region and silicon atoms during thermal annealing. As the sizes of islands approaches 400 nm² or more, the growth in two dimensional in a plane was limited, and it grew up in the direction of height. We will discuss about the formation process of ruthenium silicide on a Si(111) surface.<br>

Journal

• Journal of the Vacuum Society of Japan

  Journal of the Vacuum Society of Japan 51 (3), 128-130, 2008

  The Vacuum Society of Japan

Keywords

• Spectroscopy
• Surfaces and Interfaces
• Instrumentation
• General Materials Science

Details

• CRID: 1390001205295449984
• NII Article ID: 10021156872
• NII Book ID: AA12298652
• DOI: 10.3131/jvsj2.51.128
• ISSN: 18824749
• ISSN: 18822398
• NDL BIB ID: 9471348
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9471348
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed