In-situ Surface Conductivity Measurement by REM-M4PP Method

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  • HATANO Keisuke
    Department of Applied Physic, Tokyo University of Agriculture and Technology
  • YAZAWA Hiroyuki
    Department of Applied Physic, Tokyo University of Agriculture and Technology
  • MINODA Hiroki
    Department of Applied Physic, Tokyo University of Agriculture and Technology CREST, Japan Science and Technology Agency

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  • 反射電子顕微鏡法とミクロ４端子プローブによる表面・電気伝導その場計測
  • ハンシャ デンシ ケンビキョウホウ ト ミクロ 4 タンシ プローブ ニ ヨル ヒョウメン デンキ デンドウ ソノバ ケイソク

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Abstract

  We have developed a surface conductivity measurement system for a UHV electron microscope (UHV-EM). The sample surfaces were prepared in the UHV-EM and their structures were observed in situ by reflection electron microscopy and diffraction (REM-RHEED). After the sample preparation, the samples were cooled down to RT and the conductance measurement was carried out. The Si(111)-7×7 and Si(111)-√3×√3-Ag structures were used as sample surfaces which were prepared on the Si(111) vicinal surface inclined toward the [112] direction by 1°. The resistance of the 7×7 structure is much larger than that of the √3×√3-Ag structure and this is consistent with the previous report. This indicates that we can measure the surface conductivity by using our system.<br>

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