SiO<sub>2</sub> Etching Yield Measurements by CF<sub>3</sub> Ion Beam Injections Superposed with Light Irradiation

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  • IKUSE Kazumasa
    Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University
  • YOSHIMURA Satoru
    Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University
  • TAKIZAWA Toshifumi
    Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University
  • KARAHASHI Kazuhiro
    Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University
  • KIUCHI Masato
    Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University National Institute of Advanced Industrial Science and Technology (AIST)
  • HAMAGUCHI Satoshi
    Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University

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Other Title
  • 光照射を重畳したＣＦ３イオンビームによるＳｉＯ２エッチング率の測定
  • ヒカリ ショウシャ オ チョウジョウシタ CF3 イオン ビーム ニ ヨル SiO2 エッチングリツ ノ ソクテイ

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Abstract

  Etching yields of SiO2 by CF3 ion beam injections with or without simultaneous light irradiation have been measured by a low-energy mass-selected ion beam system. A Xe Lamp, an L2D2 lamp, an Ar ICP (inductively coupled plasma) or a VUV (Vacuum Ultraviolet) Lamp was used separately as the light source. The etching yield is the ratio of the number of incident ions to that of removed atoms. The obtained SiO2 etching yields by simultaneous irradiation of CF3 ions and photons from the light source were smaller than those by ion beam irradiation only. This difference in etching yields may be caused by modification of CFx polymer formation on the substrate surface during the beam etching process.<br>

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