Organic field-effect transistors based on vapor-deposited pentacene and soluble pentacene precursor (第48回真空に関する連合講演会プロシーディングス--2007年11月14日〜16日,東京) Organic Field-Effect Transistors Based on Vapor-Deposited Pentacene and Soluble Pentacene Precursor

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  We report the characterization and comparison of organic field-effect transistors (OFETs) based on vapor-deposited pentacene and a soluble pentacene precursor 13,6-<i>N</i>-Sulfinylacetamidopentacene in solution. The gate insulator, poly (4-vinylphenol) (PVP), was crosslinked by heat or UV irradiation. Spin-coated pentacene precursor film changed to pentacene film after heating in vacuum or nitrogen; and the film structure was characterized by the UV-visible absorption spectra and X-ray diffraction (XRD). Results show that the film structure of heated pentacene precursor is similar to that of the vapor-deposited pentacene but not exactly the same. Soluble pentacene precursor shows easier processability for fabrication of high-performance solution-processable OFETs. The determined carrier mobility for vapor-deposited pentacene film is in the order of 10<sup>-1</sup> cm<sup>2</sup>/Vs, and for soluble pentacene precursor is in the order of 10<sup>-2</sup> cm<sup>2</sup>/Vs.<br>

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  • 真空  

    真空 51(3), 169-171, 2008-03-20 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10021156974
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    ENG
  • 資料種別
    SHO
  • ISSN
    18822398
  • NDL 記事登録ID
    9471494
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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