Nドープ酸化タングステン薄膜の作製と評価 Preparation and Evaluation of Nitrogen Doped Tungsten Oxide Thin Films

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  Nitrogen doped tungsten oxide thin films were prepared by RF reactive sputtering in a gas mixture of argon, oxygen and nitrogen at room temperature. As a result of X-ray photoelectron spectroscopy, it was thought that the doped nitrogen in the films is bonding to tungsten of WO<sub>3</sub> bonding states as anion and exits in substitution sites in WO<sub>3</sub>. The optical absorption edge was shifted to lower energy region with nitrogen doping. The nitrogen doped thin films exhibit a coloration to black from transparent yellow by electrochromism. Additionally, a new peak at 2.3 eV related to nitrogen doping is observed in the spectra of color center at bleaching process.<br>

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  • 真空  

    真空 51(3), 185-187, 2008-03-20 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10021157016
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    18822398
  • NDL 記事登録ID
    9471525
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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