Preparation and Evaluation of Nitrogen Doped Tungsten Oxide Thin Films

• NAKAGAWA Koichi

  Department of Science & Technology, Meiji University

• MIURA Noboru

  Department of Science & Technology, Meiji University

• MATSUMOTO Setsuko

  Department of Science & Technology, Meiji University

• NAKANO Ryotaro

  Department of Science & Technology, Meiji University

• MATSUMOTO Hironaga

  Department of Science & Technology, Meiji University

Bibliographic Information

Other Title

• Ｎドープ酸化タングステン薄膜の作製と評価
• N ドープ サンカ タングステン ハクマク ノ サクセイ ト ヒョウカ

Abstract

  Nitrogen doped tungsten oxide thin films were prepared by RF reactive sputtering in a gas mixture of argon, oxygen and nitrogen at room temperature. As a result of X-ray photoelectron spectroscopy, it was thought that the doped nitrogen in the films is bonding to tungsten of WO₃ bonding states as anion and exits in substitution sites in WO₃. The optical absorption edge was shifted to lower energy region with nitrogen doping. The nitrogen doped thin films exhibit a coloration to black from transparent yellow by electrochromism. Additionally, a new peak at 2.3 eV related to nitrogen doping is observed in the spectra of color center at bleaching process.<br>

Journal

• Journal of the Vacuum Society of Japan

  Journal of the Vacuum Society of Japan 51 (3), 185-187, 2008

  The Vacuum Society of Japan

Keywords

• Spectroscopy
• Surfaces and Interfaces
• Instrumentation
• General Materials Science

Details

• CRID: 1390001205295423744
• NII Article ID: 10021157016
• NII Book ID: AA12298652
• DOI: 10.3131/jvsj2.51.185
• ISSN: 18824749
• ISSN: 18822398
• NDL BIB ID: 9471525
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9471525
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed