TaAl-N Thin Film Prepared by Radio Frequency and Direct Current Reactive Sputtering

• OKANO Yukiko

  Okano Works, Ltd.

• TAJIRI Shuichi

  Okano Works, Ltd.

• AOZONO Takashi

  Okano Works, Ltd.

• OKAMOTO Akio

  Technology Research Institute of Osaka Prefecture

• OGAWA Soichi

  Ogawa Creation Research Laboratory

• MIMA Hiroshi

  Osaka City University

Bibliographic Information

Other Title

• 高周波電力を重畳した直流反応性スパッタ法によるＴａＡｌ‐Ｎ膜の作製
• 高周波電力を重畳した直流反応性スパッタ法によるTaAl-N薄膜の作製
• コウシュウハ デンリョク オ チョウジョウシタ チョクリュウ ハンノウセイ スパッタホウ ニ ヨル TaAl N ハクマク ノ サクセイ

Abstract

  The electrical characteristics of TaAl-N thin films prepared by radio frequency (RF) superimposed and direct current (DC) reactive sputtering method was investigated. The properties of TaAl-N thin films were strongly influenced by the sputtering method. In the condition of Rn=30% [Rn=F(N2)/(F(N2)+F(Ar))], total pressure 0.3 Pa, the resistivity (at RT) was 3.1 Ωcm and the TCR (at 150°C) (the temperature coefficient of the resistivity) was (-) 13000 ppm/°C. The stresses of TaAl-N thin films were relieved.<br>

Journal

• Journal of the Vacuum Society of Japan

  Journal of the Vacuum Society of Japan 51 (3), 208-210, 2008

  The Vacuum Society of Japan

Keywords

• Spectroscopy
• Surfaces and Interfaces
• Instrumentation
• General Materials Science

Details

• CRID: 1390001205295559808
• NII Article ID: 10021157069
• NII Book ID: AA12298652
• DOI: 10.3131/jvsj2.51.208
• ISSN: 18824749
• ISSN: 18822398
• NDL BIB ID: 9471593
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9471593
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed