励起状酸素を用いたシリコン低温酸化の大型基板酸化への適用 Application of UV-Light Excited Ozone to Large-Sized Si Wafer at Low Temperature

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  We have oxidized Si wafer at lower than 200°C using an electronically excited oxygen atom that is generated by the irradiation of UV light to low pressure highly concentrated ozone gas. We used high-pressure mercury lamp, as the light source because it has a strong emission between 210 nm and 300 nm by which ozone is effectively absorbed and photo-excited. SiO<sub>2</sub> film formation with its thickness fluctuation of less than 0.2 nm within light-irradiated area has been easily achieved as long as the intensity of the light irradiated to low-pressure ozone is uniform within 10 percent. The SiO<sub>2</sub> film thickness is 3.3-4.1 nm at 200°C for 10 min on the 8″Si(100) wafer. By the sample rotation during oxidation process, we could oxidize the SiO<sub>2</sub> film homogeneously on the 8″ wafer.<br>   This film can be applied to a buffer layer between deposited film and poly-Si substrate of the gate dielectric film of the low temperature poly-Si thin film transistor.<br>

収録刊行物

  • 真空  

    真空 51(3), 228-231, 2008-03-20 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10021157128
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    18822398
  • NDL 記事登録ID
    9471678
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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