酸素吸着Ti/Si(001)の走査トンネル顕微鏡(STM)観察 STM Observation of Oxygen Exposed Ti/Si(001) Surface

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抄録

  Formation of titanium silicide islands by the coadsorption of titanium and oxygen on a Si(001) surface is studied by means of scanning tunneling microscopy. When the coverage of titanium is at 2 ML, subsequent oxygen exposure at 973 K produces defects preferentially near the titanium silicide islands. On the other hand, when the coverage of titanium is at around 0.1 ML, step morphology is largely changed by oxygen exposure and subsequent annealing to 873 K. This phenomenon does not change with the heating process when the oxidation precedes the titanium deposition or vice versa. Mechanism of the enhanced step-retreat process is attributed to the desorption of SiO species promoted by titanium silicide islands.<br>

収録刊行物

  • 真空  

    真空 51(5), 316-319, 2008-05-20 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10021157454
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    18822398
  • NDL 記事登録ID
    9541027
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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