Dependence on Substrate Temperature of the Properties of Co Thin Films Fabricated by RF Magnetron Sputtering with Multipolar Magnetic Plasma Confinement

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  • KUWABARA Tsuyoshi
    Department of Electronics and Photonic System Engineering, Hiroshima Institute of Technology
  • GOTOU Takanori
    Department of Electronics and Photonic System Engineering, Hiroshima Institute of Technology
  • SASASHIGE Kousuke
    Department of Electronics and Photonic System Engineering, Hiroshima Institute of Technology
  • TANAKA Ichigaku
    Department of Electronics and Photonic System Engineering, Hiroshima Institute of Technology
  • KAWABATA Keishi
    Department of Electronics and Photonic System Engineering, Hiroshima Institute of Technology

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Other Title
  • 多重磁極型高周波マグネトロンスパッタ法によるＣｏ薄膜の基板温度依存性
  • タジュウ ジキョクガタ コウシュウハ マグネトロン スパッタホウ ニ ヨル Co ハクマク ノ キバン オンド イソンセイ

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Abstract

  The dependence on substrate temperature of the structural properties of Co thin films deposited on silicon substrates by RF magnetron sputtering with multipolar magnetic plasma confinement (MMPC) was investigated. The structure of the Co films was characterized by X-ray diffraction (XRD), and their surface morphology by atomic force microscopy (AFM). It was found that the surface morphology depended strongly on the substrate temperature. The surface of Co thin films deposited at 400°C exhibited round connected textures with a maximum Rq (root mean square roughness) of 5.48 nm, while the films deposited at room temperature exhibited salient connected textures with an Rq of less than 1.18 nm. Furthermore, the XRD spectrum intensity observed for the Co films deposited at 400°C was higher than that of the films deposited at room temperature.<br>

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