誘導結合プラズマ支援型多重磁極マグネトロンスパッタ法により作製したCu薄膜に及ぼす陽極電圧と基板バイアス電圧の効果 Effect of Substrate DC Bias Voltage and Anode Voltage on the properties of Cu Films Using Magnetron Sputtering with Multipolar Magnetic Plasma Confinement Assisted by Inductively Coupled Plasma

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著者

    • 村岡 裕紀 MURAOKA Yuuki
    • 広島工業大学工学部電子・光システム工学科 Department of Electronics and Photonic Systems, Hiroshima Institute of Technology
    • 烏帽子 良 EBOSHI Ryo
    • 広島工業大学工学部電子・光システム工学科 Department of Electronics and Photonic Systems, Hiroshima Institute of Technology
    • 橘 瑛宏 TATIBANA Akihiro
    • 広島工業大学工学部電子・光システム工学科 Department of Electronics and Photonic Systems, Hiroshima Institute of Technology
    • 蓮井 友城 HASUI Yuki
    • 広島工業大学工学部電子・光システム工学科 Department of Electronics and Photonic Systems, Hiroshima Institute of Technology
    • 川畑 敬志 KAWABATA Keishi
    • 広島工業大学工学部電子・光システム工学科 Department of Electronics and Photonic Systems, Hiroshima Institute of Technology

抄録

  The effect of substrate dc bias voltage (V<sub>S</sub>) and anode dc voltage (V<sub>A</sub>) on the properties of Cu thin films using magnetron sputtering with multipolar magnetic plasma confinement assisted by inductively coupled plasma (MMPC-ICP) was characterized by X-ray diffraction (XRD) and Atomic Force Microscope (AFM). The anode electrode was placed at a distance of 10 mm from the substrate in the MMPC-ICP system in order to increase the plasma density near the substrate. It is demonstrated that an increase in V<sub>A</sub> results in a decrease in the V<sub>S</sub> voltage at which the substrate current begins to saturate. The Cu thin films were prepared by changing the substrate dc bias voltage from -100 V to 0 V at the different anode voltages ranging from 0 V to 40 V. It is shown that the Cu film deposited at V<sub>A</sub>=40 V and V<sub>S</sub>=-20 V has a maximum grain size of about 430 nm; this value is about 5 times higher than that at V<sub>A</sub>=0 V and V<sub>S</sub>=-20 V.<br>

収録刊行物

  • 真空  

    真空 51(6), 408-411, 2008-06-20 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10021157765
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    18822398
  • NDL 記事登録ID
    9571266
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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