書誌事項
- タイトル別名
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- Effect of Substrate DC Bias Voltage and Anode Voltage on the Properties of Cu Films Using Magnetron Sputtering with Multipolar Magnetic Plasma Confinement Assisted by Inductively Coupled Plasma
- ユウドウ ケツゴウ プラズマ シエンガタ タジュウ ジキョク マグネトロン スパッタホウ ニ ヨリ サクセイシタ Cu ハクマク ニ オヨボス ヨウキョク デンアツ ト キバン バイアス デンアツ ノ コウカ
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The effect of substrate dc bias voltage (VS) and anode dc voltage (VA) on the properties of Cu thin films using magnetron sputtering with multipolar magnetic plasma confinement assisted by inductively coupled plasma (MMPC-ICP) was characterized by X-ray diffraction (XRD) and Atomic Force Microscope (AFM). The anode electrode was placed at a distance of 10 mm from the substrate in the MMPC-ICP system in order to increase the plasma density near the substrate. It is demonstrated that an increase in VA results in a decrease in the VS voltage at which the substrate current begins to saturate. The Cu thin films were prepared by changing the substrate dc bias voltage from -100 V to 0 V at the different anode voltages ranging from 0 V to 40 V. It is shown that the Cu film deposited at VA=40 V and VS=-20 V has a maximum grain size of about 430 nm; this value is about 5 times higher than that at VA=0 V and VS=-20 V.<br>
収録刊行物
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- Journal of the Vacuum Society of Japan
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Journal of the Vacuum Society of Japan 51 (6), 408-411, 2008
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390001205295917824
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- NII論文ID
- 10021157765
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- NII書誌ID
- AA12298652
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- ISSN
- 18824749
- 18822398
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- NDL書誌ID
- 9571266
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可