Precise Sound Velocity Measurement Using Laser Ultrasound and its Application for Temperature Measurement in Semiconductor Processing

Bibliographic Information

Other Title
  • レーザー超音波による精密音速測定と半導体プロセスの温度計測への応用
  • レーザー チョウオンパ ニ ヨル セイミツ オンソク ソクテイ ト ハンドウタイ プロセス ノ オンド ケイソク エノ オウヨウ

Search this article

Abstract

A non-contact and precise longitudinal velocity measurement technique, for temperature measurement in semiconductor processing, was developed using a combination of 100 MHz narrow-band laser ultrasound and a pulse-echo-overlap technique. A diffraction correction method for laser ultrasound, based on a Gaussian weighted circular source — a point detection model, was also developed to enhance the accuracy of echo period measurements. It was shown that the longitudinal velocity in 10mm thick single crystal silicon can be measured with a resolution of better than 0.01% . It was also shown that the temperature of a 0.6mm thick silicon wafer can be evaluated with a resolution higher than 2oC at 500oC and 1000oC.

Journal

Citations (1)*help

See more

References(18)*help

See more

Details 詳細情報について

Report a problem

Back to top