原子間力顕微鏡法を用いたLSI用Cu配線の腐食挙動解析 In-Situ Analysis of Corrosion Behavior of Copper Wiring System in LSI by Atomic Force Microscopy

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抄録

After the chemical mechanical planarization (CMP) processing of Cu wirings, defects are often observed and some of them induce problems in manufacturing large scale integrated circuit (LSI) devices. This investigation demonstrates that atomic force microscopy (AFM) is capable of performing in-situ nanoscopic visualization of initiation and growth processes of localized corrosion on the Cu wirings on LSI wafers in etching solutions of similar composition to the CMP process conditions. The AFM images indicate the presence of defects and dishings as a result of the CMP processing of the Cu wiring. The AFM analysis showed that defects and dishings became the starting points of pitting corrosion. The growth of corrosion is discussed in terms of cross-sectional and scaling analysis of AFM images. Moreover, the nanoscopic initiation and growth mechanisms of pitting corrosion and intergranular corrosion of Cu wiring are discussed based upon in-situ nanoscopic visualization by using AFM.

収録刊行物

  • 表面技術 = The Journal of the Surface Finishing Society of Japan  

    表面技術 = The Journal of the Surface Finishing Society of Japan 59(7), 470-476, 2008-07-01 

    The Surface Finishing Society of Japan

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各種コード

  • NII論文ID(NAID)
    10021170402
  • NII書誌ID(NCID)
    AN1005202X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    09151869
  • NDL 記事登録ID
    9571337
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-291
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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