原子間力顕微鏡法を用いたLSI用Cu配線の腐食挙動解析 In-Situ Analysis of Corrosion Behavior of Copper Wiring System in LSI by Atomic Force Microscopy
After the chemical mechanical planarization (CMP) processing of Cu wirings, defects are often observed and some of them induce problems in manufacturing large scale integrated circuit (LSI) devices. This investigation demonstrates that atomic force microscopy (AFM) is capable of performing in-situ nanoscopic visualization of initiation and growth processes of localized corrosion on the Cu wirings on LSI wafers in etching solutions of similar composition to the CMP process conditions. The AFM images indicate the presence of defects and dishings as a result of the CMP processing of the Cu wiring. The AFM analysis showed that defects and dishings became the starting points of pitting corrosion. The growth of corrosion is discussed in terms of cross-sectional and scaling analysis of AFM images. Moreover, the nanoscopic initiation and growth mechanisms of pitting corrosion and intergranular corrosion of Cu wiring are discussed based upon in-situ nanoscopic visualization by using AFM.
- 表面技術 = The Journal of the Surface Finishing Society of Japan
表面技術 = The Journal of the Surface Finishing Society of Japan 59(7), 470-476, 2008-07-01
The Surface Finishing Society of Japan