垂直MRAM用スピン偏極増強用FeCo層およびMgOバリア層の結晶性向上 Improvements in Crystallinity of MgO Barrier Layer and FeCo Spin Polarization Enhancement Layer for Perpendicular MRAM
Rare-earth-transition metal (RE-TM) alloy films, such as TbFeCo and GdFeCo layers were used as perpendicularly magnetized layers for pinned and free layers in a perpendicular magnetic tunneling junction (p-MTJ). (100) oriented MgO tunneling barrier layer can be deposited on (100) oriented Fe (and FeCo) buffer layers. The (100) texture of the Fe (and FeCo) layers were enhanced by depositing them on the RE-TM layers. X-ray diffraction study clarified that MgO layers deposited on the Fe (and FeCo) layers revealed apparent (100) orientation at the early stage of the film growth. 3nm-thick MgO layer deposited on GdFeCo(100nm)/Fe(3nm) exhibited (100) texture.
粉体および粉末冶金 55(2), 116-120, 2008-02-15
Japan Society of Powder and Powder Metallurgy