Improvement in Performance of Organic Light-emitting Diodes by Interfacial Engineering
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- MATSUSHIMA Toshinori
- School of Materials Science, Japan Advanced Institute of Science and Technology
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- MURATA Hideyuki
- School of Materials Science, Japan Advanced Institute of Science and Technology
Bibliographic Information
- Other Title
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- 接合界面制御による有機エレクトロルミネッセンス素子の素子特性の向上
- セツゴウ カイメン セイギョ ニ ヨル ユウキ エレクトロ ルミネッセンス ソシ ノ ソシ トクセイ ノ コウジョウ
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Abstract
We demonstrated a marked improvement in performance of organic light-emitting diodes (OLEDs) by interfacial engineering at electrode/organic and organic/organic heterojunction interfaces. The use of an ultrathin 0.75-nm-thick MoO3 layer between indium tin oxide (ITO) and N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine (α-NPD) drastically decreases the driving voltage of OLEDs and prevents OLED degradation at an ITO/α-NPD interface. We show that the insertion of a thin 5-nm-thick mixed layer of α-NPD and tris(8-hydroxyquinoline) aluminum (Alq3) reduces the driving voltage and enhances the OLED stability as well. The decrease in driving voltage may reduce the generation of Joule heat and thus decrease thermally induced electrochemical decomposition of Alq3.<br>
Journal
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- KOBUNSHI RONBUNSHU
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KOBUNSHI RONBUNSHU 65 (9), 573-578, 2008
The Society of Polymer Science, Japan
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Details
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- CRID
- 1390001206525256832
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- NII Article ID
- 130004489183
- 10021993827
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- NII Book ID
- AN00085011
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- ISSN
- 18815685
- 03862186
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- NDL BIB ID
- 9665046
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed