Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2Ta_2O_6/SiON Buffer Layer

• TOKUMITSU Eisuke

  Precision & Intelligence Laboratory, Tokyo Institute of Technology

• FUJII Gen

  Frontier Collaborative Research Center, Tokyo Institute of Technology

• ISHIWARA Hiroshi

  Precision & Intelligence Laboratory, Tokyo Institute of Technology

Journal

• Extended abstracts of the ... Conference on Solid State Devices and Materials

  Extended abstracts of the ... Conference on Solid State Devices and Materials 1999 404-405, 1999-09-20

Details

• CRID: 1572261550518740480
• NII Article ID: 10022537013
• NII Book ID: AA10777858
• Text Lang: en
• Data Source:
  • CiNii Articles