Highly Manufacturable 64M bit Ultra Low Power SRAM Using a Novel 3-Dimensional S^3 (Stacked Single-crystal Si) Cell Technology

  • CHO W. S
    Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics Co.
  • LIM H.
    Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics Co.
  • JANG J. H.
    Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics Co.
  • KANG Y. H.
    Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics Co.
  • MOON J. H.
    Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics Co.
  • YEO C. D.
    Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics Co.
  • KWAK K. H.
    Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics Co.
  • CHOI B. H.
    Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics Co.
  • HWANG B. J.
    Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics Co.
  • JUNG W. R.
    Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics Co.
  • KIM S. J.
    Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics Co.
  • KIM J. H.
    Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics Co.
  • NA J. H.
    Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics Co.
  • JEONG J. H.
    Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics Co.
  • JUNG S. M.
    Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics Co.
  • KIM Kinam
    Advanced Technology Development Team, Semiconductor R&D Center, Memory Division Samsung Electronics Co.

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  • CRID
    1573105975448673152
  • NII論文ID
    10022538168
  • NII書誌ID
    AA10777858
  • 本文言語コード
    en
  • データソース種別
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