Direct Silicon Bonded (DSB) Mixed Orientation Substrate for High Performance Bulk CMOS Technology

参考文献9件

SUNG C. Y.

Research Division, T.J. Watson Research Center
YIN Haizhou

Semiconductor Research & Development Center Microelectronic Division
NG H.

Semiconductor Research & Development Center Microelectronic Division
SAENGER K. L.

Research Division, T.J. Watson Research Center
PFEIFFER G.

Semiconductor Research & Development Center Microelectronic Division
CHAN V.

Semiconductor Research & Development Center Microelectronic Division
ZHANG R.

Semiconductor Research & Development Center Microelectronic Division
LI J.

Semiconductor Research & Development Center Microelectronic Division
OTT J. A.

Research Division, T.J. Watson Research Center
BENDERNAGEL R.

Semiconductor Research & Development Center Microelectronic Division
KO S. B.

Semiconductor Research & Development Center Microelectronic Division
REN Z.

Semiconductor Research & Development Center Microelectronic Division
CHEN X.

Semiconductor Research & Development Center Microelectronic Division
KU V.

Semiconductor Research & Development Center Microelectronic Division
LUO Z. J.

Semiconductor Research & Development Center Microelectronic Division
ROVEDO N.

Semiconductor Research & Development Center Microelectronic Division
FOGEL K.

Research Division, T.J. Watson Research Center
KHARE M.

Research Division, T.J. Watson Research Center
SHAHIDI G.

Research Division, T.J. Watson Research Center
CROWDER S.

Semiconductor Research & Development Center Microelectronic Division

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Extended abstracts of the ... Conference on Solid State Devices and Materials

Extended abstracts of the ... Conference on Solid State Devices and Materials 2006 160-161, 2006-09-13