Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON

• UMEZAWA N.

  Advanced Electronic Materials Center, National Institute for Materials Science

• SHIRAISHI K.

  Graduate School of Pure and Applied Sciences, Univ. of Tsukuba

• MIYAZAKI S.

  Graduate School of Advanced Sciences of Matter, Hiroshima Univ.

• UEDONO A.

  Graduate School of Pure and Applied Sciences, Univ. of Tsukuba

• AKASAKA Y.

  Semiconductor Leading Edge Technology Inc.

• INUMIYA S.

  Semiconductor Leading Edge Technology Inc.

• HASUNUMA R.

  Graduate School of Pure and Applied Sciences, Univ. of Tsukuba

• YAMABE K.

  Graduate School of Pure and Applied Sciences, Univ. of Tsukuba

• MOMIDA H.

  Computational Materials Science Center, National Institute for Materials Science

• OHNO T.

  Computational Materials Science Center, National Institute for Materials Science

• OHMORI K.

  Advanced Electronic Materials Center, National Institute for Materials Science

• CHIKYOW T.

  Advanced Electronic Materials Center, National Institute for Materials Science

• NARA Y.

  Semiconductor Leading Edge Technology Inc.

• YAMADA K.

  Nanotechnology Research Laboratories, Waseda University

収録刊行物

• Extended abstracts of the ... Conference on Solid State Devices and Materials

  Extended abstracts of the ... Conference on Solid State Devices and Materials 2006 460-461, 2006-09-13

詳細情報

• CRID: 1574231875369363328
• NII論文ID: 10022545733
• NII書誌ID: AA10777858
• 本文言語コード: en
• データソース種別:
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