Threshold Voltage Instability of 45-nm-node Poly-Si-or FUSI-Gated SRAM Transistors Caused by Dopant Lateral Diffusion in Poly-Si

• HOSAKA Kimihiko

  FUJITSU LABORATORIES, LTD.

• AOYAMA Takayuki

  FUJITSU LABORATORIES, LTD.

• SUZUKI Kunihiro

  FUJITSU LABORATORIES, LTD.

収録刊行物

• Extended abstracts of the ... Conference on Solid State Devices and Materials

  Extended abstracts of the ... Conference on Solid State Devices and Materials 2006 1068-1069, 2006-09-13

詳細情報

• CRID: 1571417125601842688
• NII論文ID: 10022547659
• NII書誌ID: AA10777858
• 本文言語コード: en
• データソース種別:
  • CiNii Articles