Diffusion control technique in TiN stacked metal gate electrodes for p-MISFETs
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- SAKASHITA S.
- Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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- KAWAHARA T.
- Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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- MIZUTANI M.
- Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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- INOUE M.
- Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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- MORI K.
- Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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- YAMANARI S.
- Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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- HIGASHI M.
- Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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- NISHIDA Y.
- Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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- HONDA K.
- Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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- MURATA N.
- Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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- TSUCHIMOTO J.
- Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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- YUGAMI J.
- Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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- FUJIWARA K.
- Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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- YONEDA M.
- Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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- Extended abstracts of the ... Conference on Solid State Devices and Materials
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Extended abstracts of the ... Conference on Solid State Devices and Materials 2006 1130-1131, 2006-09-13
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- CRID
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- NII論文ID
- 10022547855
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- NII書誌ID
- AA10777858
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- 本文言語コード
- en
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