Full Range Work Function Modulation by Nitrogen Incorporation in Hf-Mo Binary Alloys Gate Electrode

参考文献6件

LAI Chao-Sung

Department of Electronic Engineering, Chang Gung University
HUANG Chin-Wei

Department of Electronic Engineering, Chang Gung University
PENG Hsing-Kan

Department of Electronic Engineering, Chang Gung University
CHEN Chih-Hsin

Department of Electronic Engineering, Chang Gung University
FANG Yu-Ching

Chung-Shan Institute of Science & Technology Materials & Electro-Optics Research Division
HSU Li

Chung-Shan Institute of Science & Technology Materials & Electro-Optics Research Division
WANG Hui-Chun

Chung-Shan Institute of Science & Technology Materials & Electro-Optics Research Division
LEE Chung-Yuan

Nanya Technology Corporation
LIN Shian-Jyh

Nanya Technology Corporation

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Extended abstracts of the ... Conference on Solid State Devices and Materials

Extended abstracts of the ... Conference on Solid State Devices and Materials 2007 354-355, 2007-09-19