Si基板上のフッ化物系共鳴トンネルダイオード  [in Japanese] Fluoride resonant tunneling diodes fabricated on Si substrate  [in Japanese]

    • 筒井 一生 TSUTSUI Kazuo
    • 東京工業大学大学院 総合理工学研究科 Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

Journal

應用物理  

應用物理 78(5), 432-436, 2009-05-10 

応用物理学会

References:  19

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Codes

  • NII Article ID (NAID) :
    10024751771
  • NII NACSIS-CAT ID (NCID) :
    AN00026679
  • Text Lang :
    JPN
  • Article Type :
    REV
  • ISSN :
    03698009
  • NDL Article ID :
    10296877
  • NDL Source Classification :
    ZM17(科学技術--科学技術一般--力学・応用力学)
  • NDL Call No. :
    Z15-243
  • Databases :
    CJP  NDL 

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