Debris-Free High-Speed Laser-Assisted Low-Stress Dicing for Multi-Layered MEMS
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- Izawa Yusaku
- Institute of Laser Engineering, Osaka University
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- Tsurumi Yosuke
- Institute of Laser Engineering, Osaka University
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- Tanaka Shuji
- Department of Nanomechanics, Tohoku University
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- Fukushi Hideyuki
- Department of Nanomechanics, Tohoku University
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- Sueda Keiichi
- Institute of Laser Engineering, Osaka University
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- Nakata Yoshiki
- Institute of Laser Engineering, Osaka University
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- Esashi Masayoshi
- Department of Nanomechanics, Tohoku University
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- Miyanaga Noriaki
- Institute of Laser Engineering, Osaka University
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- Fujita Masayuki
- Institute of Laser Engineering, Osaka University Institute for Laser Technology
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抄録
We have investigated a novel debris-free high speed laser dicing technology for MEMS. The target were a Tempax or Pyrex glass and silicon and their anodically-bonded multi-layered wafers. Our technology combines three processes: dicing guide fabrication, wafer separation process, and a tape expansion. First process was the internal transformation using a nanosecond Nd:YVO4 laser. The laser pulse width and repetition rate was 11 ns and 20∼100 kHz. The laser scanning speed was over 100 mm/sec. The second process was a mechanical bending separation. The bending stress for glass and Si wafer separation was 10 and 100 MPa, respectively. At the third step, spaces between chips were opened by the tape expansion. The internal transformation fabricated in the first process worked well as the guide of the separation. The diced lines completely followed the internal transformation.
収録刊行物
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- 電気学会論文誌E(センサ・マイクロマシン部門誌)
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電気学会論文誌E(センサ・マイクロマシン部門誌) 129 (3), 63-68, 2009
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390282679438209152
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- NII論文ID
- 10024776595
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- NII書誌ID
- AN1052634X
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- ISSN
- 13475525
- 13418939
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- NDL書誌ID
- 10182801
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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