1.8V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET

• HARIMA Fumio

  NEC Electronics Corp. The Institute of Electronics, Information and Communication Engineers

• BITO Yasunori

  NEC Electronics Corp. The Institute of Electronics, Information and Communication Engineers

• TAKAHASHI Hidemasa

  NEC Electronics Corp.

• IWATA Naotaka

  NEC Electronics Corp. The Institute of Electronics, Information and Communication Engineers

抄録

We have developed a power amplifier IC for Bluetooth Class 1 operating at single low voltage of 1.8V for both control and drain voltages. We can realize it due to fully enhancement-mode hetero-junction FETs utilizing a re-grown p⁺-GaAs gate technology. The power amplifier is a highly compact design as a small package of 1.5mm×1.5mm×0.4mm with fully integrated gain control and shutdown functions. An impressive power added efficiency of 52% at an output power of 20dBm is achieved with an associated gain of 22dB. Also, sufficiently low leakage current of 0.25μA at 27°C is exhibited, which is comparable to conventional HBT power amplifiers.

収録刊行物

• IEICE Transactions on Electronics

  IEICE Transactions on Electronics E91-C (7), 1104-1108, 2008

  一般社団法人 電子情報通信学会

キーワード

• enhancement mode
• hetero-junction FETs
• power amplifiers

詳細情報

• CRID: 1390001204376113280
• NII論文ID: 10026818667
• NII書誌ID: AA10826283
• DOI: 10.1093/ietele/e91-c.7.1104
• ISSN: 17451353
• ISSN: 09168524
• Web Site: https://www.jstage.jst.go.jp/article/transele/E91.C/7/E91.C_7_1104/_pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可