Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs

• SHIGEKAWA Naoteru

  NTT Photonics Laboratories, NTT Corporation

• SUGITANI Suehiro

  NTT Photonics Laboratories, NTT Corporation

抄録

Effects of stress in passivation films on the electrical properties of (0001) AlGaN/GaN HEMTs are numerically analysed in the framework of the edge force model with anisotropical characteristics in elastic properties of group-III nitrides explicitly considered. Practical compressive stresses in passivation films induce negative piezoelectric charges below the gates and bring forth a-few-volt shallower threshold voltages. In addition, the shift in the threshold voltage due to the compressive stress is proportional to L _G^-1.1∼-1.5 with gate length L _G, which is comparable to the expectation based on the charge balance scheme. These result suggest that passivation films with designed stress might play a crucial role in realising AlGaN/GaN HEMTs with shallow or positive threshold voltages.

収録刊行物

• IEICE Transactions on Electronics

  IEICE Transactions on Electronics E93-C (8), 1212-1217, 2010

  一般社団法人 電子情報通信学会

キーワード

• GaN
• HEMT
• threshold voltage
• piezoelectric effects
• film stress

詳細情報

• CRID: 1390001204375665920
• NII論文ID: 10027365718
• NII書誌ID: AA10826283
• DOI: 10.1587/transele.e93.c.1212
• ISSN: 17451353
• ISSN: 09168524
• Web Site: http://www.jstage.jst.go.jp/article/transele/E93.C/8/E93.C_8_1212/_pdf
• 本文言語コード: en
• データソース種別:
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  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可