0.18-V Input Charge Pump with Forward Body Bias to Startup Boost Converter for Energy Harvesting Applications
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- CHEN Po-Hung
- Institute of Industrial Science, The University of Tokyo
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- ISHIDA Koichi
- Institute of Industrial Science, The University of Tokyo
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- ZHANG Xin
- Institute of Industrial Science, The University of Tokyo
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- OKUMA Yasuyuki
- Semiconductor Technology Academic Research Center (STARC)
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- RYU Yoshikatsu
- Semiconductor Technology Academic Research Center (STARC)
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- TAKAMIYA Makoto
- Institute of Industrial Science, The University of Tokyo
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- SAKURAI Takayasu
- Institute of Industrial Science, The University of Tokyo
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抄録
In this paper, a 0.18-V input three-stage charge pump circuit applying forward body bias is proposed for energy harvesting applications. In the developed charge pump, all the MOSFETs are forward body biased by using the inter-stage/output voltages. By applying the proposed charge pump as the startup in the boost converter, the kick-up input voltage of the boost converter is reduced to 0.18V. To verify the circuit characteristics, the conventional zero body bias charge pump and the proposed forward body bias charge pump were fabricated with 65nm CMOS process. The measured output current of the proposed charge pump under 0.18-V input voltage is increased by 170% comparing to the conventional one at the output voltage of 0.5V. In addition, the boost converter successfully boosts the 0.18-V input to higher than 0.65-V output.
収録刊行物
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- IEICE Transactions on Electronics
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IEICE Transactions on Electronics E94-C (4), 598-604, 2011
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詳細情報 詳細情報について
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- CRID
- 1390282679351963520
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- NII論文ID
- 10029505633
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- NII書誌ID
- AA10826283
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- BIBCODE
- 2011IEITC..94..595C
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- ISSN
- 17451353
- 09168524
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- 本文言語コード
- en
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- データソース種別
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- JaLC
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- 使用不可