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We investigated the effects of various field plate and buried gate structures on the DC and small signal characteristics of 4H-silicon carbide (SiC) metal-semiconductor field-effect transistors (MESFETs). In comparison with the source-connected field plate, the gate-connected field plate exhibited superior frequency response while having similar DC characteristics. In order to further enhance the output power, dual field plates were employed in conjunction with a buried gate structure.
- IEICE Transactions on Electronics
IEICE Transactions on Electronics 94(5), 842-845, 2011-05-01
The Institute of Electronics, Information and Communication Engineers