Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors

    • LEE Jae-Gil
    • School of Electronic and Electrical Engineering, Hongik University
    • CHO Chun-Hyung
    • Department of Electronic and Electrical Engineering, Hongik University
    • CHA Ho-Young
    • School of Electronic and Electrical Engineering, Hongik University

Abstract

We investigated the effects of various field plate and buried gate structures on the DC and small signal characteristics of 4H-silicon carbide (SiC) metal-semiconductor field-effect transistors (MESFETs). In comparison with the source-connected field plate, the gate-connected field plate exhibited superior frequency response while having similar DC characteristics. In order to further enhance the output power, dual field plates were employed in conjunction with a buried gate structure.

Journal

IEICE Transactions on Electronics  

IEICE Transactions on Electronics 94(5), 842-845, 2011-05-01 

The Institute of Electronics, Information and Communication Engineers

References:  9

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Codes

  • NII Article ID (NAID) :
    10029506201
  • NII NACSIS-CAT ID (NCID) :
    AA10826283
  • Text Lang :
    ENG
  • Article Type :
    ART
  • ISSN :
    09168524
  • DOI :
    10.1587/transele.E94.C.842
  • Databases :
    CJP  J-STAGE 

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