Read/Search this Article
Abstract
Tantalum electrochemical diode has been developed. It consists of tantalum needle (anode) having an oxidized film metamorphosed by heating treatment, carbon electrode (cathode) and electrolyte (4%(v/v)H_2SO_4 solution). Maximum applicable reverse voltage of tantalum diode is 300 volts and reverse leakage current of tantalum diode is less than a micro-ampere when applied reverse voltage is below 35 volts. It works as a good diode when the frequency of input signal is below 100 KC. Temperature dependence of tantalum diode is obtained experimentally.
Tantalum electrochemical diode has been developed. It consists of tantalum needle (anode) having an oxidized film metamorphosed by heating treatment, carbon electrode (cathode) and electrolyte (4%(v/v)H_2SO_4 solution). Maximum applicable reverse voltage of tantalum diode is 300 volts and reverse leakage current of tantalum diode is less than a micro-ampere when applied reverse voltage is below 35 volts. It works as a good diode when the frequency of input signal is below 100 KC. Temperature dependence of tantalum diode is obtained experimentally.
Journal
- Memoirs of the Faculty of Engineering, Yamaguchi University [List of Volumes]
-
Memoirs of the Faculty of Engineering, Yamaguchi University 15(1), 127-132, 1965-04 [Table of Contents]
Yamaguchi University