Roginsky機構の修正 : 半導性鉛酸化物上のH_2O_2の分解反応 Modification of Roginsky's Mechanism-Decomposition Reaction of H_2O_2 on Semiconductive Lead Oxides-

Journal

Bulletin of Tokyo Gakugei University. Series IV, Mathematics and natural sciences   [List of Volumes]

Bulletin of Tokyo Gakugei University. Series IV, Mathematics and natural sciences 24, 99-103, 1972-09-10  [Table of Contents]

Tokyo Gakugei University

Codes

  • NII Article ID (NAID) :
    110000270870
  • NII NACSIS-CAT ID (NCID) :
    AN00158283
  • Text Lang :
    ENG
  • Journal Type :
    大学紀要
  • ISSN :
    03716813
  • NDL Article ID :
    7590451
  • NDL Source Classification :
    ZM2(科学技術--科学技術一般--大学・研究所・学会紀要)
  • NDL Call No. :
    Z14-236
  • Databases :
    NDL  NII-ELS