Etching Rate of Copper by CuCl2-HCl Solution.

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  • MATSUMOTO Katsutoshi
    Department of Metallurgy, Graduate School of Engineering, Tohoku University
  • ARAI Hideyuki
    Graduate Student, Graduate School of Engineering, Tohoku University
  • TANIGUCHI Shoji
    Department of Metallurgy, Graduate School of Engineering, Tohoku University
  • KIKUCHI Atsushi
    Department of Metallurgy, Graduate School of Engineering, Tohoku University

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  • ＣｕＣｌ２‐ＨＣｌ溶液による銅のエッチング速度
  • CuCl2 HCl ヨウエキ ニ ヨル ドウ ノ エッチング ソクド

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Abstract

The etching rate of copper in CuCl2-HCl solution was investigated by using agitated vessel. It was revealed that this system was controlled by mass-transfer. The dissolution rate of CuCl was almost double the etching rate of copper except for low CuCl2 concentration region. Considering a stoichiometric relationship, it was thought that CuCl was precipitated on the copper surface during wet etching and the etching rate was controlled by the diffusion rate of CuCl2-. The etching rate could be evaluated by the diffusion rate of CuCl2- that was obtained from the saturation concentration and the diffusion coefficient. In the low CuCl2 concentration region, the etching rate was calculated by using the mass transfer model that considered not only molecular diffusion but also electronic migration of ionic species. In results, the calculated values were in good agreement with the observed ones.

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