書誌事項
- タイトル別名
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- A Study on EEM(Elastic Emission Machining) - Influences of Dissolved Oxygen to Si Wafer Surface.
- EEM Elastic Emission Machining ニカンスルケンキ
- Influences of Dissolved Oxygen to Si Wafer Surface
- 加工液中の溶存酸素がSiウエハ表面に与える影響
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抄録
Dissolved oxygen in the ultrapure water has been known to oxidize Si wafer. In EEM, ultrapure water is also employed as a carrier fluid of ultra-fine powders. Oxidization properties of Si (100) wafer surface under EEM setup were investigated in this work. An oxidization with the growth speed higher than several 10nm/h was observed. The distribution of the oxide film thickness seems to depend strongly on the flow pattern on the Si wafer surface. The high speed oxidization observed in this work was understood to concern both to the extent of shear flow rate on the Si wafer surface and to contents of not only dissolved oxygen but also OH- ion in the ultrapure water.
収録刊行物
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- 精密工学会誌
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精密工学会誌 64 (6), 907-912, 1998
公益社団法人 精密工学会
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詳細情報 詳細情報について
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- CRID
- 1390282679742759424
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- NII論文ID
- 110001367961
- 10006240459
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- NII書誌ID
- AN1003250X
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- ISSN
- 1882675X
- 09120289
- http://id.crossref.org/issn/09120289
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- NDL書誌ID
- 4491909
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可