書誌事項
- タイトル別名
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- Study on In-process Measurement of Silicon Wafer Surface Defects by Laser Scattered Defect Pattern. (1st Report). The Characteristics of Detecting Fine Contaminations by Laser Scattered Defect Pattern.
- ヒカリ サンラン パターン オ モチイタ シリコンウエハ カコウ ヒョウメン ケッカン ノ インプロセス ケイソク ニ カンスル ケンキュウ ダイ1ポウ ビショウ フチャク イブツ ノ ヒカリ サンラン パターン トクセイ カイセキ
- The Characteristics of Detecting Fine Contaminations by Laser Scattered Defect Pattern
- 微小付着異物の光散乱パターン特性解析
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This paper presents a new optical measurement method for evaluating small defects on a silicon wafer surface by detecting the intensity distribution, "Laser Scattered Defect Pattern(LSDP), " corresponding to the superposition of scattered light from a defect and reflected light from a surface. In order to verify the feasibility of application of this optical measurement method to in-process measurement, the experimental measurements were carried out by identifying the LSDPs with the standard particles on the silicon wafer surface which had been observed by SEM. It was found that this method makes it possible to measure the small defects and contaminations with size of submicron order and has the possibility of discriminating the different kinds of ones.
収録刊行物
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- 精密工学会誌
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精密工学会誌 65 (9), 1284-1289, 1999
公益社団法人 精密工学会
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詳細情報 詳細情報について
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- CRID
- 1390001204764960384
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- NII論文ID
- 110001372720
- 10008838602
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- NII書誌ID
- AN1003250X
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- ISSN
- 1882675X
- 09120289
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- NDL書誌ID
- 4846974
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可