Maskless Pattern Formation Which Used Alkaline Etching and Nano-scale Cutting by Using Friction Force Microscope.

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  • 摩擦力顕微鏡機構による極微細加工とアルカリエッチングを併用した単結晶シリコンヘのマスクレスパターン形成
  • マサツリョク ケンビキョウ キコウ ニ ヨル ゴク ビサイ カコウ ト アルカリエッチング オ ヘイヨウ シタ タンケッショウ シリコン エ ノ マスクレスパターン ケイセイ

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Abstract

Neither the processing phenomenon nor the rule factor of nano-scale cutting is not still enough understood. It is an important problem to understand them in order to establish the processing technologies of minute parts. In this paper, the result of nano-scale cutting of single crystal silicon by using friction force microscope is described. The (100) surface of single crystal silicon was etched by KOH solution after nano-scale cutting of 15 μm × 15 μm area. It was found the etch rate was extremely different between the cut area and non-cut area. The cut area remained as it was little being etched. Dependence of remaining height on normal cutting force and cutting velocity and KOH solution concentration was examined. The new processing technique of micro-structure was proposed by applying the above-mentioned experiment result.

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