Growth mechanism of a III-VI layered compound semiconductor thin film grown on a MoS_2 substrate

• Hayashi T.

  The University of Tokyo

• Ueno K.

  The University of Tokyo

• Saiki K.

  The University of Tokyo

• Koma A.

  The University of Tokyo

Bibliographic Information

Other Title

• 23aT-6 MoS_2基板上III-VI層状化合物半導体超薄膜の成長機構

Journal

• Meeting Abstracts of the Physical Society of Japan

  Meeting Abstracts of the Physical Society of Japan 55.1.4 (0), 759-, 2000

  The Physical Society of Japan

Details

• CRID: 1390282681012642688
• NII Article ID: 110001916471
• DOI: 10.11316/jpsgaiyo.55.1.4.0_759_2
• ISSN: 21890803
• Text Lang: ja
• Data Source:
  • JaLC
  • CiNii Articles