Far-Infrared Absorption Spectra of Impurity Band in n-Type Germanium
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- Kobayashi Michihiro
- Department of Material Physics, Faculty of Engineering Science, Osaka University
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- Sakaida Yuuji
- Department of Material Physics, Faculty of Engineering Science, Osaka University
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- Taniguchi Masaki
- Department of Material Physics, Faculty of Engineering Science, Osaka University
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- Narita Shin-ichiro
- Department of Material Physics, Faculty of Engineering Science, Osaka University
書誌事項
- タイトル別名
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- Far Infrared Absorption Spectra of Impu
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抄録
Far-infrared absorption spectra in As- or Sb-doped germanium in the intermediate impurity concentration range have been investigated at 1.5 K. A steep rising of the absorption toward higher energies is found in the spectra, and their energies are closely connected with the thermal activation energies ε2’s which are determined by simultaneous measurements of the D.C. resistivity. The concentration effect and [111]-uniaxial compressive stress effect have shown that the absorption is attributed to the electronic transition from the impurity ground states to the upper Hubbard band. The evidence of the variable-range hopping is obtained from the shape of the tail of the spectra.
収録刊行物
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- Journal of the Physical Society of Japan
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Journal of the Physical Society of Japan 47 (1), 138-144, 1979
一般社団法人 日本物理学会
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詳細情報
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- CRID
- 1390001204183546752
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- NII論文ID
- 110001964597
- 210000088112
- 130003895947
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- NII書誌ID
- AA00704814
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- BIBCODE
- 1979JPSJ...47..138K
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- COI
- 1:CAS:528:DyaE1MXltFCrs7c%3D
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- ISSN
- 13474073
- 00319015
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- NDL書誌ID
- 2056482
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可