Electrical Conductivity and Galvanomagnetic Effects in (SN)x Single Crystal

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  • Kaneto Keiichi
    Department of Electrical Engineering, Faculty of Engineering, Osaka University
  • Yamamoto Masazumi
    Department of Electrical Engineering, Faculty of Engineering, Osaka University
  • Yoshino Katsumi
    Department of Electrical Engineering, Faculty of Engineering, Osaka University
  • Inuishi Yoshio
    Department of Electrical Engineering, Faculty of Engineering, Osaka University

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タイトル別名
  • Electrical Conductivity and Galvanomagnetic Effects in (SN)<I><SUB>x</SUB></I> Single Crystal
  • Electrical Conductivity and Galvanomagn
  • Electrical Conductivity and Galvanomagnetic Effects in (SN)<sub><i>x</i></sub> Single Crystal

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Microwave conductivity σ⊥ perpendicular to the b axis of crystalline (SN)x has been estimated by the cavity perturbation method in the skin-depth regime to be about 40 Ω−1cm−1 which increases with decreasing temperature monotonously, contrary to the case of dc measurement. This fact indicates that σ⊥ is strongly influenced by the inter-fiber barrier and the intrinsic conductivity anisotropy in a fiber is much less than that estimated by dc method in bulk material. From the normal positive magnetoresistance observed either above 77 K or even below 4.2 K at higher magnetic fields (>30 kG), carrier mobilities along the b axis and perpendicular to it are estimated to be about 250 and 6 cm2/Vsec, respectively, at 290 K. Negative magnetoresistance observed below 4.2 K at the magnetic fields below 30 kG is discussed in terms of the spin dependent scattering of carriers in connection with the appearance of the resistance minimum. Experimental data on Hall effect of crystalline (SN)x is also discussed.

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