Photoemission Study of Substitution Effects on the Conduction-Band States in the Kondo Insulator YbB<sub>12</sub>

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  • Susaki Tomofumi
    Department of Physics and Department of Complexity Science and Engineering, University of Tokyo, Bunkyo-ku, Tokyo 113-0033
  • Fujimori Atsushi
    Department of Physics and Department of Complexity Science and Engineering, University of Tokyo, Bunkyo-ku, Tokyo 113-0033
  • Takeda Yukiharu
    Department of Physical Sciences, Hiroshima University, Higashi-Hiroshima 739-8526
  • Taniguchi Masashi Masaki
    Department of Physical Sciences, Hiroshima University, Higashi-Hiroshima 739-8526 Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-Hiroshima 739-8526
  • Shimada Kenya
    Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-Hiroshima 739-8526
  • Namatame Hirofumi
    Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-Hiroshima 739-8526
  • Hiura Sayaka
    Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-Hiroshima 739-8526
  • Iga Fumitoshi
    Department of Quantum Matters, ADSM, Hiroshima University, Higashi-Hiroshima 739-8526
  • Takabatake Toshiro
    Department of Quantum Matters, ADSM, Hiroshima University, Higashi-Hiroshima 739-8526

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タイトル別名
  • Photoemission Study of Substitution Effects on the Conduction-Band States in the Kondo Insulator YbB12.

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We have studied the substitution and temperature dependences of the B sp-Yb d-derived conduction-band states in Yb1-xLuxB12 (x = 0.25, 0.50, 0.75, and 1.00) by high-resolution photoemission spectroscopy. As the Yb content increases, the density of states (DOS) between the Fermi level (EF) and ∼ - 20 meV is reduced while a broad peak grows at ∼-80 meV. The DOS reduction is considerably weakened at high temperatures (> ∼100 K), consistent with the gap formation in YbB12 only at low temperatures. The temperature dependence of the DOS near EF gradually becomes stronger with decreasing x but is abruptly enhanced below x = 0.25-0.50, showing the crucial contribution of Yb-Yb intersite interaction to the gap formation in YbB12. The ∼-80 meV peak survives up to large x, indicating that it is caused by a single-impurity effect.

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