27p-S-2 Development of Si multi-foil target for Resonance Transition Radiation(II)

• Nakayama K.

  Toshiba Corporation

• Endo I.

  Dept. of Phys. Hiroshima Univ.

• Horiguchi T.

  Dept. of Phys. Hiroshima Univ.

• Takahashi T.

  Dept. of Phys. Hiroshima Univ.

• Kobayashi T.

  Dept. of Phys. Hiroshima Univ.

• Matsukado K.

  Dept. of Phys. Hiroshima Univ.

• Takashima Y.

  Dept. of Phys. Hiroshima Univ.

• Goto K.

  Dept. of Phys. Hiroshima Univ.

• Isshiki T.

  Dept. of Phys. Hiroshima Univ.

• Yoshida K.

  INS Univ.Tokyo

• Muto M.

  INS Univ.Tokyo

• Nitta H.

  Dept. of Phys.Tokyo Gakugei Univ.

• Potylitsyn A.P.

  Nucl.Phys.Inst.Tomsk Polytechnical Univ.

• Amosov C.

  Nucl.Phys.Inst.Tomsk Polytechnical Univ.

Bibliographic Information

Other Title

• 27p-S-2 共鳴遷移放射X線用Si多層膜の開発(II)

Journal

• Meeting Abstracts of the Physical Society of Japan

  Meeting Abstracts of the Physical Society of Japan 1995.4 (0), 5-, 1995

  The Physical Society of Japan

Details

• CRID: 1390282681140958464
• NII Article ID: 110001982660
• DOI: 10.11316/jpsgaiyoj.1995.4.0_5_2
• ISSN: 24331171
• Text Lang: ja
• Data Source:
  • JaLC
  • CiNii Articles