書誌事項
- タイトル別名
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- Raman Characterization of Oxidation Behavior of Free Carbon in Silicon Oxycarbide Ceramics
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Tantalum and niobium containing silicon oxycarbide ceramics were prepared from hybrid gels through cohydrolysis with methyltriethoxysilane and pentaethoxyniobium/tantalum, and pyrolysis at 1000°C. To investigate the behavior of free carbon in Si-Nb-C-O and Si-Ta-C-O ceramics, Raman spectroscopy was used. The spectra obtained before oxidation showed a higher shift of the G band at around approximately 1610 cm-1, which means a cumulative band of G and D′. After oxidation, however, a symmetric G band, the shift toward a normal position at 1580 cm-1 and a weaker background were detected. These phenomena were found to strongly correlate with the oxidation of carbon reactive sites, i.e., those of radical and edge carbon species in tiny graphene layer of free carbon.<br>
収録刊行物
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- Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌)
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Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌) 112 (1311), 612-614, 2004
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390001205248555776
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- NII論文ID
- 110002288270
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- NII書誌ID
- AN10040326
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- ISSN
- 18821022
- 09145400
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- NDL書誌ID
- 7140304
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可