HIP焼結した窒化ケイ素焼結体の熱特性

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  • 渡利 広司
    長岡技術科学大学大学院材料工学専攻
  • 関 喜幸
    長岡技術科学大学大学院材料工学専攻 (株) 三協アルミニウム
  • 石崎 幸三
    長岡技術科学大学機械系材料設計大講座

書誌事項

タイトル別名
  • Thermal Properties of HIP Sintered Silicon Nitride
  • HIP ショウケツシタ チッカ ケイソ ショウケツタイ ノ ネツ トクセイ

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Thermal diffusivity and conductivity as well as specific heat were studied for capsule-HIP sintered Si3N4. Yttria and alumina additives with a total amount of 6mol% were used. For a given additive percentage, specimens of higher β phase fraction had higher thermal diffusivity and conductivity, as expected However, samples with larger amounts of Y2O3 additive had higher thermal diffusivity and conductivity in spite of a lower β phase fraction than those with more Al2O3 additive. The highest thermal conductivity was 70W/(m·K) with 6mol% Y2O3 additive alone. The reason is that aluminium and oxygen ions are soluble in β-Si3N4 particles, in the case for Al2O3 addition.<br>Oxygen, presented as an impurity, also had a profound effect on the thermal diffusivity and conductivity. Higher oxygen contents reduced the thermal diffusivity and conductivity. This may be due to the amount of grain boundary glassy phase.<br>The specific heat of sintered Si3N4 was 0.67±0.02kJ/(K·g). The crystalline structure (α or β-Si3N4), additive composition, and raw material particle size did not show any effect on the specific heat.

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