Growth Conditions and Morphology of GaN Single Crystals Fabricated by the Na Flux Method.

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  • AOKI Masato
    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
  • YAMANE Hisanori
    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
  • SHIMADA Masahiko
    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
  • SARAYAMA Seiji
    Department 5, R & D Center, Research and Development Group, Ricoh Company, Ltd.
  • DISALVO Francis J.
    Department of Chemistry and Chemical Biology, Cornell University

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  • Naフラックス法により合成したGaN単結品の成長条件と結品形態

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Abstract

GaN single crystals were synthesized by using the Na-Ga melt at 700-850°C and 1-5 MPa of N2 for 200h. The formation of GaN was not observed at 800°C under 1 MPa of N2, and at 850°C and 1.5MPa of N2. GaN single crystals were obtained lower temperatures and/or the higher N2 pressures. The morphology of the crystals tended to change from prismatic to platelet by decreasing the growth temperature and/or increasing N2 pressure. Colorless transparent prismatic single crystals with a size of about 1.0±0.5±0.5mm3 were obtained by adopting a three-step heating process in which the temperature was increased from 750°C at 0.5°C/h to 800°C under 3MPa of N2.

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