書誌事項
- タイトル別名
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- Thermal Stability of Stacking Faults in β-SiC Specimens
- ベータ SiC ニ オケル セキソウ ケッカン ノ ネツ アンテイセイ
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Stacking faults in SiC are one of the important factors in treat SiC, since they affect physical and chemical properties. Ultra-pure β-SiC specimens with stacking faults were annealed at various temperatures for various duration in an Ar atmosphere under a condition without grain growth. Stacking faults decreased in two steps by heat treatment characterized by fast decrease and by slow decrease, respectively. The apparent activation energy for the former was estimated to be 182kJ/mol and that for the latter was estimated to be 260kJ/mol. The value of the latter corresponded to the activation energy for migration of carbon atoms in β-SiC. It was also observed that lattice strain decreased with decreasing stacking faults.
収録刊行物
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- Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌)
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Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌) 106 (1233), 483-487, 1998
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390282680255506816
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- NII論文ID
- 110002289429
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- NII書誌ID
- AN10040326
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- ISSN
- 18821022
- 09145400
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- NDL書誌ID
- 4470605
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- データソース種別
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- JaLC
- NDL
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