後方散乱電子線回折法による<i>In Situ</i> Si<sub>3</sub>N<sub>4</sub>セラミックスのβ-Si<sub>3</sub>N<sub>4</sub>柱状粒子の結晶方位関係の解析

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  • Analysis of Crystallographic Orientation of Elongated β-Si<sub>3</sub>N<sub>4</sub> Particles in <i>In Situ</i> Si<sub>3</sub>N<sub>4</sub> Composite by Electron Back Scattered Diffraction Method
  • Analysis of Crystallographic Orientatio

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Electron back scattered diffraction (EBSD) method was applied to examine the crystallographic orientation of ceramics, microstructure on a large scale. This method is given in altermotive to transmission electron microscopy, which gives information limited to a narrow portion of the specimen. To prove that the EBSD method can be applied to analyze the crystallographic orientation of ceramics, we have verified the crystallographic orientation of single crystal ceramics of cubic and corundum structures using a field emission scanning electron microscopy (FE-SEM) coupled with an orientation imaging microscopy analysis device. Then, also the crystallographic orientation of in situ Si3N4 composite was analyzed by the EBSD method. Results of the EBSD characterization showed that in Si3N4 ceramics of hexagonal structure the elongated Si3N4 particles grew in the alignment direction of seed grains. The growth direction and the side planes of the elongated Si3N4 particles were influenced by both the alignment of seed grains and by the hotpressing pressure.

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