溶融ケイ素から育成したβ-Si_3N_4単結晶の精製  [in Japanese] Refinement of β-Si_3N_4 Single Crystal Grown from Silicon Melt  [in Japanese]

Abstract

Silicon powder in a reaction-sintered silicon nitride crucible was heated at 1600℃ in a nitrogen atomosphere. Clustered β-Si_3N_4 single crystals were obtained in residual silicon metal after cooling. The silicon residuals were dissolved by chemical purification using a mixture of aqueous HF and HNO_3, and subsequently treated and with H_2SO_4. Scanning electron microscopy observation showed that large β-Si_3N_4 crystals without Si residuals could be successfully separated by this process.

Journal

Journal of the Ceramic Society of Japan   [List of Volumes]

Journal of the Ceramic Society of Japan 108(1257), 515-517, 2000-05-01  [Table of Contents]

The Ceramic Society of Japan

References:  15

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Cited by:  1

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Codes

  • NII Article ID (NAID) :
    110002289842
  • NII NACSIS-CAT ID (NCID) :
    AN10040326
  • Text Lang :
    JPN
  • Article Type :
    Journal Article
  • ISSN :
    09145400
  • NDL Article ID :
    5378636
  • NDL Source Classification :
    ZP9(科学技術--化学・化学工業--無機化学・無機化学工業--セラミックス・窯業)
  • NDL Call No. :
    Z17-249
  • DOI :
    10.2109/jcersj.108.1257_515
  • Databases :
    CJP  CJPref  NDL  NII-ELS  Journal@rchive 

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