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Transparent thin films of ZnO and Al-doped ZnO have been prepared on a glass substrate by a spin-coating method using a solution of zinc di-n-butoxide-2, 2'-iminodiethanol-ethanol. Heating temperature of 500℃ was adopted to convert a precursor of ZnO into ZnO(hexagonal wurtzite structure) polycrystalline films. The films had a high transparency in the visible region and resistivities of 〜10^1 and 〜10^0Ω・cm for undoped and Al-doped ZnO films, respectively. Annealing in hydrogen atmosphere reduced the resistivity of the films to 〜10^<-2> and 〜10^<-3>Ω・cm for undoped and Al-doped ZnO films, respectively, without affecting the optical transmission.