書誌事項
- タイトル別名
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- Synthesis of Sulfur-Doped Amorphous Carbon Thin Films by Plasma CVD Using Thiophene as a Starting Material.
- チオフェン オ ゲンリョウ ト スル イオウ ドープアモルファス タンソ ハクマク ノ CVD ゴウセイ
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抄録
Amorphous carbon thin films containing sulfur were synthesized from thiophene (C4H4S) by the r.f. (13.56 MHz) plasma CVD. The r.f. power was applied intermittently to control the deposition temperature (Td). While maintaining a constant r.f. power (200 W) and reactive pressure (13.3 Pa), we investigated the effect of Td on the film chemical structures and properties: specifically microroughness, density, microhardness and internal stress. The deposition rate and microroughness of the films decreased with increasing Td, while the film density, microhardness and internal stress increased with increasing Td. X-ray photoelectron spectroscopic (XPS) analysis indicated that S/C ratio of the films remained constant and has no connection with Td. XPS and Raman spectroscopic analyses showed that the films were composed of two kinds of microdomains with sp3 and sp2 bonds similar to the diamond-like carbon (DLC) film. Sulfur incorporation into the film significantly reduced the internal stress.
収録刊行物
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- Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌)
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Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌) 111 (1290), 133-136, 2003
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390001205249561216
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- NII論文ID
- 110002292457
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- NII書誌ID
- AN10040326
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- ISSN
- 18821022
- 09145400
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- NDL書誌ID
- 6433317
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可