ＡｌＮ膜のＸ線的残留応力測定（第四報）　　交替式スパッタリング法によるＡｌＮ膜の残留応力測定

DOI Web Site 参考文献15件

書誌事項

タイトル別名
  • X-Ray Residual Stress Measurment of AlN Films, IV. Residual Stress Measurement in AlN Film Deposited by Alternating Sputtering Method.
  • コウタイシキ スパッタリングホウ ニヨル AlN マク ノ ザンリュウ オウリ

この論文をさがす

抄録

Crystal orientation and residual stress development in AlN films deposited on BLC glass (Borosilicate glass; the termal stress expansion coefficient of which is nearly equal to that of AlN) substrate were investigated by the X-ray diffraction method. The AlN films were prepsred by an alternating planar magnetron sputtering system under the condition of constant substrate temperature, various nitrogen gas pressure between 0.17Pa and 1.1Pa and various switching time to alternate the anodic and catholic polarity of two target electrodes between 30sec and 600sec.<br>The measurement of intensity from 00·2-diffraction showed that the c-axis orientation of AlN film was improved when the film was deposited at low nitrogen gas pressure below 0.5Pa and large switching time over 300sec. The tensile residual stresses wrer found in the films deposited at low nitrogen gas pressure below 0.3Pa or high nitrogen gas pressure over 0.8Pa and short switching time below 120sec.

収録刊行物

  • 材料

    材料 46 (12), 1429-1435, 1997

    公益社団法人 日本材料学会

参考文献 (15)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ