スパッタリング生成によるＡｌＮ膜の残留応力の基板および基板温度依存性

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  • Dependence of Substrate and Its Temperature on Residual Stress in AlN Films Deposited by Sputtering.
  • スパッタリング セイセイ ニ ヨル AlN マク ノ ザンリュウ オウリョク

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Crystal orientation and residual stress development in AlN films deposited on BLC glass and quartz substrates were investigated by an X-ray diffraction method. The deposition was made by a planar magnetron sputtering system with two facing targets under the nitrogen gas pressure of 0.39Pa in the substrate temperature range between 373K and 553K.<br>The measurement of diffraction intensity from (00·2) plane showed that the c-axis orientation of AlN films was improved when deposited at higher substrate temperatures than 523K. Large tensile residual stresses, 0.9-1.4GPa for the BLC substrate and 1.4-2.7GPa for the quartz substrate, were found in the films deposited at low substrate temperatures (≤523K). Especially, the residual stress in the film on a quartz substrate showed a large increase with substrate temperature, whereas that on a BLC substrate showed a small increase. A very small stress was found in the film deposited at high substrate temperatures (>523K) for both substrates.<br>The role of intrinsic and thermal residual stresses on resultant stress development was discussed.

収録刊行物

  • 材料

    材料 42 (477), 627-633, 1993

    公益社団法人 日本材料学会

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